Warning: The input profile is the ionised dopant profile. The user has the option of several mobility models, which are described on the About page of the mobility calculator
#PC1D SILICONE ONE JUNCTION SIMULATOR#
The latter two definitions were chosen so that the simulator returns the sheet resistance that would be measured by an ideal four-point probe measurement. The junction depth z j is defined as follows: If there is no background, z j equals the depth at which the minimum permissible dopant concentration N min occurs, as defined on the 'Option' page if the background and dopant profile are of opposite types, z j is the depth at which | N A( z) – N D( z)| equals zero and if the background and dopant profiles are of the same type, z j equals the background thickness. A background concentration can be included in the analysis, which is necessarily a uniform doping profile. These are usually created by diffusing dopant atoms into the semiconductor at high temperatures, but can also be created by implanting dopant atoms at high energies. The doping profile represents a surface diffusion, such as an emitter or a back-surface field. The equations for these functions are shown below. In the case of a silicon semiconductor, boron atoms are acceptors and phosphorus atoms are donors.Ī doping profile can be uploaded from a CSV file or generated as an exponential, Gaussian or inverse error function (ERFC). The net ionised doping concentration is defined as N( z) = | N A( z) – N D( z)|, where N A and N D are the ionised concentration of acceptor and donor atoms. The sheet resistance has the dimensions Ω/sq.
Where z j is the junction depth and q is the charge of an electron. The sheet resistance ρ sq at equilibrium is determined from the net ionised doping concentration N( z) and the mobility of the majority carriers μ maj by the equation
The calculator then determines the sheet resistance and the junction depth of the surface diffusion at any temperature. The user can either generate a dopant profile, or upload a profile from a SIMS, ECV, or spreading-resistance measurement. The calculator simulates a four-point probe measurement of a surface diffusion, such as the emitter or the back-surface field of a photovoltaic solar cell. This calculator determines the sheet resistance of an arbitrarily doped semiconductor at equilibrium (i.e., in the dark and with no applied voltage).
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